High contrast ratio, high uniformity multiple quantum well spatial light modulators

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	High contrast ratio, high uniformity multiple quantum well spatial light modulators
	Huang Yuyang ; Liu H C ; Wasilewski Z R ; Buchanan M ; Laframboise S R ; Yang Chen ; Cui Guoxin ; Bian Lifeng ; Yang Hui ; Zhang Yaohui
刊名	journal of semiconductors
	2010
卷号	31 期号:3 页码:62-65
中文摘要	our latest research results on gaas-algaas multiple quantum well spatial light modulators are presented.the thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. a contrast ratio (cr) of 102 by varying bias voltage from 0 to 6.7 v is achieved after fine tuning the cavity by etching an adjust layer. both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high cr.
学科主题	光电子学
收录类别	CSCD
资助信息	the suzhou international cooperation fund, china,the president fund of cas,the international collaboration plan for science and technology of the chinese ministry of science and technology
语种	英语
公开日期	2011-08-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21510]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Huang Yuyang,Liu H C,Wasilewski Z R,et al. High contrast ratio, high uniformity multiple quantum well spatial light modulators[J]. journal of semiconductors,2010,31(3):62-65.
APA	Huang Yuyang.,Liu H C.,Wasilewski Z R.,Buchanan M.,Laframboise S R.,...&Zhang Yaohui.(2010).High contrast ratio, high uniformity multiple quantum well spatial light modulators.journal of semiconductors,31(3),62-65.
MLA	Huang Yuyang,et al."High contrast ratio, high uniformity multiple quantum well spatial light modulators".journal of semiconductors 31.3(2010):62-65.