Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells

doi:10.1063/1.5019608

	Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells
	Qian, Chong-Xin 2; Deng, Zun-Yi 2; Yang, Kang 2; Feng, Jiangshan 1; Wang, Ming-Zi 2; Yang, Zhou 1; Liu, Shengzhong (Frank)1,3; Feng, Hong-Jian 2
刊名	APPLIED PHYSICS LETTERS
	2018-02-26
卷号	112 期号:9
ISSN号	0003-6951
DOI	10.1063/1.5019608
文献子类	Article
英文摘要	Interface engineering has become a vital method in accelerating the development of perovskite solar cells in the past few years. To investigate the effect of different contacted surfaces of a light absorber with an electron transporting layer, TiO2, we synthesize CsPbBr3/TiO2 thin films with two different interfaces (CsBr/TiO2 and PbBr2/TiO2). Both interfacial heterostructures exhibit enhanced visible light absorption, and the CsBr/TiO2 thin film presents higher absorption than the PbBr2/TiO2 interface, which is attributed to the formation of interface states and the decreased interface bandgap. Furthermore, compared with the PbBr2/TiO2 interface, CsBr/TiO2 solar devices present larger output short circuit current and shorter photoluminescence decay time, which indicates that the CsBr contacting layer with TiO2 can better extract and separate the photo-induced carriers. The first-principles calculations confirm that, due to the existence of staggered gap (type II) offset junction and the interface states, the CsBr/TiO2 interface can more effectively separate the photo-induced carriers and thus drive the electron transfer from the CsPbBr3 perovskite layer to the TiO2 layer. These results may be beneficial to exploit the potential application of all-inorganic perovskite CsPbBr3-based solar cells through the interface engineering route. Published by AIP Publishing.
WOS关键词	HALIDE PEROVSKITES ; CHARGE EXTRACTION ; THIN-FILM ; STABILITY ; PERFORMANCE ; BR ; HETEROJUNCTION ; NANOWIRES ; LAYERS ; SEMICONDUCTOR
WOS研究方向	Physics
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000427022500047
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/168928]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Feng, Hong-Jian
作者单位	1.Shaanxi Normal Univ, Xian 710119, Shaanxi, Peoples R China 2.Northwest Univ Xian, Sch Phys, Xian 710069, Shaanxi, Peoples R China 3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
推荐引用方式 GB/T 7714	Qian, Chong-Xin,Deng, Zun-Yi,Yang, Kang,et al. Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells[J]. APPLIED PHYSICS LETTERS,2018,112(9).
APA	Qian, Chong-Xin.,Deng, Zun-Yi.,Yang, Kang.,Feng, Jiangshan.,Wang, Ming-Zi.,...&Feng, Hong-Jian.(2018).Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells.APPLIED PHYSICS LETTERS,112(9).
MLA	Qian, Chong-Xin,et al."Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells".APPLIED PHYSICS LETTERS 112.9(2018).