Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems

doi:10.1002/adma.201805582

	Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems
	Chen, Xin 2; Yang, He 2; Wu, Bin 2; Wang, Lifeng 2; Fu, Qiang 1; Liu, Yunqi 2
刊名	ADVANCED MATERIALS
	2019-03-22
卷号	31 期号:12 页码:9
关键词	dimensionality epitaxy graphene-hexagonal boron nitride growth
ISSN号	0935-9648
DOI	10.1002/adma.201805582
通讯作者	Wu, Bin(wubin@iccas.ac.cn) ; Liu, Yunqi(liuyq@iccas.ac.cn)
英文摘要	Epitaxy traditionally refers to the growth of a crystalline adlayer on a crystalline surface, and has been demonstrated in several simple material systems over decades. Beyond this, it is not clear whether the growth of 2D materials on templates of various dimensionalities is possible, and no effective theory or model is available for describing the complex epitaxial growth kinetics. Here a library of hexagonal boron nitride epitaxy is presented on graphene-hexagonal boron nitride templates of various dimensionalities, including 2D homo/heteromaterial surface and 1D interfaces of homo/heteromaterials. A framework that allows the description of various kinetic growth by combined geometric and structural modeling is developed. Using these tools, the underlying mechanisms for the complex merging process, grain boundary formation, edge-configuration-dependent growth difference, position-dependent size difference, and the correlation among epilayer orientation, crystal structure and geometry are elucidated. This work provides a general viewpoint for understanding epitaxial growth in complex systems.
资助项目	National Basic Research Program of China[2016YFA0200101] ; National Natural Science Foundation of China[21633012] ; National Natural Science Foundation of China[60911130231] ; National Natural Science Foundation of China[51233006] ; National Natural Science Foundation of China[61390500] ; Beijing Municipal Science & Technology Commission[Z161100002116025] ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB12030100]
WOS关键词	HEXAGONAL BORON-NITRIDE ; VAPOR-DEPOSITION GROWTH ; INPLANE HETEROSTRUCTURES ; GRAIN-BOUNDARIES ; MONOLAYER ; INTERFACE ; DOMAINS ; COPPER ; FLAKES ; FILMS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000462619000001
资助机构	National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://cas-ir.dicp.ac.cn/handle/321008/165736]
专题	大连化学物理研究所_中国科学院大连化学物理研究所
通讯作者	Wu, Bin; Liu, Yunqi
作者单位	1.Chinese Acad Sci, State Key Lab Catalysis, Collaborat Innovat Ctr Chem Energy Mat iChEM, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Chen, Xin,Yang, He,Wu, Bin,et al. Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems[J]. ADVANCED MATERIALS,2019,31(12):9.
APA	Chen, Xin,Yang, He,Wu, Bin,Wang, Lifeng,Fu, Qiang,&Liu, Yunqi.(2019).Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems.ADVANCED MATERIALS,31(12),9.
MLA	Chen, Xin,et al."Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems".ADVANCED MATERIALS 31.12(2019):9.