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	Mnsb/porous silicon hybrid structure prepared by physical vapor deposition
	Xiu, HX; Chen, NF; Peng, CT
刊名	Journal of crystal growth
	2003-11-01
卷号	259期号:1-2页码:110-114
关键词	Physical vapor deposition processes Manganese antimonide Porous silicon
ISSN号	0022-0248
DOI	10.1016/s0022-0248(03)01591-4
通讯作者	Xiu, hx()
英文摘要	Mnsb/porous silicon hybrid structure was prepared by physical vapor deposition technique. the structure and surface morphology of the mnsb films were analyzed by x-ray diffraction and scanning electron microscope, respectively. the magnetic hysteresis loops were obtained by an alternative gradient magnetometer. based on the measurements, only mnsb phase was found and the surface morphology was rough and island-like. mnsb thin films show ferromagnetism at room temperature. (c) 2003 elsevier b.v. all rights reserved.
WOS关键词	POROUS-SILICON ; FILMS ; MNSB ; EPITAXY
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000186123700017
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429314
专题	半导体研究所
通讯作者	Xiu, HX
作者单位	1.Chinese Acad Sci, Key Lab Senicond Mat Sci, Inst Semicond Mat Sci, Beijing 100083, Peoples R China 2.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Natl Micrograv Lab, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Xiu, HX,Chen, NF,Peng, CT. Mnsb/porous silicon hybrid structure prepared by physical vapor deposition[J]. Journal of crystal growth,2003,259(1-2):110-114.
APA	Xiu, HX,Chen, NF,&Peng, CT.(2003).Mnsb/porous silicon hybrid structure prepared by physical vapor deposition.Journal of crystal growth,259(1-2),110-114.
MLA	Xiu, HX,et al."Mnsb/porous silicon hybrid structure prepared by physical vapor deposition".Journal of crystal growth 259.1-2(2003):110-114.

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