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	Space grown semi-insulating gallium arsenide single crystal and its application
	Chen, NF; Zhong, XR; Zhang, M; Lin, LY
刊名	Impact of the gravity level on materials processing and fluid dynamics
	2002
卷号	29期号:4页码:537-540
ISSN号	0273-1177
通讯作者	Chen, nf()
英文摘要	Low noise field effect transistors and analogue switch integrated circuits (ics) have been fabricated in semi-insulating gallium arsenide (si-gaas) wafers grown in space by direct ion-implantation. the electrical behaviors of the devices and the ics have surpassed those fabricated in the terrestrially grown si-gaas wafers. the highest gain and the lowest noise of the transistors made from space-grown si-gaas wafers are 22.8 db and 0.78 db, respectively. the threshold back-gating voltage of the ics made from space-grown si-gaas wafers is better than 8.5 v the con-elation between the characterizations of materials and devices is studied systematically. (c) 2002 cospar. published by elsevier science ltd. all rights reserved.
WOS关键词	SEMIINSULATING GAAS ; STOICHIOMETRY ; DEFECTS
WOS研究方向	Engineering ; Astronomy & Astrophysics ; Geology ; Meteorology & Atmospheric Sciences
WOS类目	Engineering, Aerospace ; Astronomy & Astrophysics ; Geosciences, Multidisciplinary ; Meteorology & Atmospheric Sciences
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000175230700007
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429107
专题	半导体研究所
通讯作者	Chen, NF
作者单位	1.Acad Sinica, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hebei Inst Semicond, Shijiazhuang 050002, Hebei, Peoples R China
推荐引用方式 GB/T 7714	Chen, NF,Zhong, XR,Zhang, M,et al. Space grown semi-insulating gallium arsenide single crystal and its application[J]. Impact of the gravity level on materials processing and fluid dynamics,2002,29(4):537-540.
APA	Chen, NF,Zhong, XR,Zhang, M,&Lin, LY.(2002).Space grown semi-insulating gallium arsenide single crystal and its application.Impact of the gravity level on materials processing and fluid dynamics,29(4),537-540.
MLA	Chen, NF,et al."Space grown semi-insulating gallium arsenide single crystal and its application".Impact of the gravity level on materials processing and fluid dynamics 29.4(2002):537-540.

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