| Defect states in cubic gan epilayer grown on gaas by metalorganic vapor phase epitaxy | |
| Xu, SJ; Or, CT; Li, Q; Zheng, LX; Xie, MH; Tong, SY; Yang, H | |
| 刊名 | Physica status solidi a-applied research
 |
| 2001-11-23 | |
| 卷号 | 188期号:2页码:681-685 |
| ISSN号 | 0031-8965 |
| 通讯作者 | Xu, sj() |
| 英文摘要 | Defect states in cubic gan epilayers grown on gaas were investigated with the photoluminescence technique. one shallow donor and two acceptors were identified to be involved in relevant optical transitions. the binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. these values are in good agreement with recent theoretical results. |
| WOS关键词 | OPTICAL-TRANSITIONS ; PHOTOLUMINESCENCE |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:000172779700044 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429052 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, SJ |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, SJ,Or, CT,Li, Q,et al. Defect states in cubic gan epilayer grown on gaas by metalorganic vapor phase epitaxy[J]. Physica status solidi a-applied research,2001,188(2):681-685. |
| APA | Xu, SJ.,Or, CT.,Li, Q.,Zheng, LX.,Xie, MH.,...&Yang, H.(2001).Defect states in cubic gan epilayer grown on gaas by metalorganic vapor phase epitaxy.Physica status solidi a-applied research,188(2),681-685. |
| MLA | Xu, SJ,et al."Defect states in cubic gan epilayer grown on gaas by metalorganic vapor phase epitaxy".Physica status solidi a-applied research 188.2(2001):681-685. |
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