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	Effect of ion-induced damage on ganas/gaas quantum wells grown by plasma-assisted molecular beam epitaxy
	Li, LH; Pan, Z; Zhang, W; Lin, YW; Wang, XY; Wu, RH; Ge, WK
刊名	Journal of crystal growth
	2001-02-01
卷号	223期号:1-2页码:140-144
关键词	Molecular beam epitaxy Quantum wells
ISSN号	0022-0248
通讯作者	Li, lh()
英文摘要	The effect of ion-induced damage on ganas/gaas quantum wells (qws) grown by molecular beam epitaxy employing a dc plasma as the n source was investigated. ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the x-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. it was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the qws. the bandedge potential fluctuations for the samples grown with and without ion removal magnets (irms) are 44 and 63 mev, respectively. it was found that the n-as atomic interdiffusion at the interfaces of the qws was enhanced by the ion damage-induced defects. the estimated activation energies of the n-as atomic interdiffusion for the samples grown with and without irms are 3.34 and 1.78 ev, respectively. (c) 2001 elsevier science b.v. all rights reserved.
WOS关键词	BAND-GAP ENERGY ; PHOTOLUMINESCENCE ; TEMPERATURE ; GANXAS1-X ; FILMS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000167306600021
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429043
专题	半导体研究所
通讯作者	Li, LH
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Li, LH,Pan, Z,Zhang, W,et al. Effect of ion-induced damage on ganas/gaas quantum wells grown by plasma-assisted molecular beam epitaxy[J]. Journal of crystal growth,2001,223(1-2):140-144.
APA	Li, LH.,Pan, Z.,Zhang, W.,Lin, YW.,Wang, XY.,...&Ge, WK.(2001).Effect of ion-induced damage on ganas/gaas quantum wells grown by plasma-assisted molecular beam epitaxy.Journal of crystal growth,223(1-2),140-144.
MLA	Li, LH,et al."Effect of ion-induced damage on ganas/gaas quantum wells grown by plasma-assisted molecular beam epitaxy".Journal of crystal growth 223.1-2(2001):140-144.

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