| Homoepitaxial growth and device characteristics of sic on si-face (0001) 6h-sic | |
| Li, JM; Sun, GS; Zhu, SR; Wang, L; Luo, MC; Zhang, FF; Lin, LY | |
| 刊名 | Journal of crystal growth
 |
| 2001-07-01 | |
| 卷号 | 227页码:816-819 |
| 关键词 | X-ray diffraction Molecular beam epitaxy Semiconducting silicon compounds |
| ISSN号 | 0022-0248 |
| 通讯作者 | Sun, gs() |
| 英文摘要 | Homoepitaxial growth of sic on a si-face (0 0 0 1) gh-sic substrate has been performed in a modified gas-source molecular beam epitaxy system with si2h6 and c2h4 at temperatures ranging 1000 1450 degreesc while keeping a constant sic ratio (0.7) in the gas phase. x-ray diffraction patterns, raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline sic. mesa-type sic p-n junctions were obtained on these epitaxial layers, and their i-v characteristics are presented. (c) 2001 elsevier science b.v. all rights reserved. |
| WOS关键词 | LOW-TEMPERATURE GROWTH ; FILMS |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000169557600158 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2429008 |
| 专题 | 半导体研究所 |
| 通讯作者 | Sun, GS |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, JM,Sun, GS,Zhu, SR,et al. Homoepitaxial growth and device characteristics of sic on si-face (0001) 6h-sic[J]. Journal of crystal growth,2001,227:816-819. |
| APA | Li, JM.,Sun, GS.,Zhu, SR.,Wang, L.,Luo, MC.,...&Lin, LY.(2001).Homoepitaxial growth and device characteristics of sic on si-face (0001) 6h-sic.Journal of crystal growth,227,816-819. |
| MLA | Li, JM,et al."Homoepitaxial growth and device characteristics of sic on si-face (0001) 6h-sic".Journal of crystal growth 227(2001):816-819. |
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