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	The content calculation of hexagonal phase inclusions in cubic gan films on gaas(001) substrates grown by metalorganic chemical vapor deposition
	Sun, XL; Wang, YY; Yang, H; Li, JB; Zheng, LX; Xu, DP; Wang, ZG
刊名	Thin solid films
	2000-06-15
卷号	368期号:2页码:237-240
关键词	Metalorganic chemical vapor deposition Cubic gan Hexagonal phase content 4-circle x-ray double crystal diffraction
ISSN号	0040-6090
通讯作者	Sun, xl()
英文摘要	Cubic gan(c-gan) films are grown on gaas(001) substrates by metalorganic chemical vapor deposition (mocvd). two gan samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle x-ray double crystal diffraction (xrdcd) was used to study the secondary crystallographic phases presented in the c-gan films. the phase composition of the epilayers was determined by x-ray reciprocal space mapping. the intensities of the c-gan(002) and h-gan(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. the content of the hexagonal phase inclusions in the c-gan films was calculated to about 1.6 and 7.9%, respectively. the thicker buffer layer is not preferable for growing high quality pure c-gan films. (c) 2000 elsevier science s.a. all rights reserved.
WOS关键词	MOLECULAR-BEAM EPITAXY ; GALLIUM NITRIDE ; THIN-FILMS ; SILICON ; GAAS
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000087414100015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428881
专题	半导体研究所
通讯作者	Sun, XL
作者单位	1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Sun, XL,Wang, YY,Yang, H,et al. The content calculation of hexagonal phase inclusions in cubic gan films on gaas(001) substrates grown by metalorganic chemical vapor deposition[J]. Thin solid films,2000,368(2):237-240.
APA	Sun, XL.,Wang, YY.,Yang, H.,Li, JB.,Zheng, LX.,...&Wang, ZG.(2000).The content calculation of hexagonal phase inclusions in cubic gan films on gaas(001) substrates grown by metalorganic chemical vapor deposition.Thin solid films,368(2),237-240.
MLA	Sun, XL,et al."The content calculation of hexagonal phase inclusions in cubic gan films on gaas(001) substrates grown by metalorganic chemical vapor deposition".Thin solid films 368.2(2000):237-240.

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