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	Investigation on the origin of wurtzite domains in thick cubic gan using reactive ion etching
	Xu, D; Yang, H; Zhang, SM; Zheng, LX; Zhao, DG; Li, SF; Wang, YT; Wu, RH
刊名	Thin solid films
	2000-08-22
卷号	372期号:1-2页码:25-29
ISSN号	0040-6090
通讯作者	Xu, d()
英文摘要	We measured the depth profiling of photoluminescence (pl) in cubic gan films. the depth-resolved pl of normal grown gan layers showed that the near-band-edge luminescence intensities of both cubic and wurtzite domains remained constant only until an etching depth of up to 2.7 mu m, but their ratio remained unchanged at all etching depths. moreover, when a thin in0.1ga0.9n layer was sandwiched between two gan layers, the content of the wurtzite domains increased, and its distribution showed a dependence on thickness. as the reactive ion etching depth increased, the pl intensity ratio of cubic gan to wurtzite domains increased. based on the distribution, the strain relaxation, instead of the instability of cubic gan at high temperature, was attributed to the origin of wurtzite domains. (c) 2000 elsevier science s.a. all rights reserved.
WOS关键词	MOLECULAR-BEAM EPITAXY ; LIGHT-EMITTING-DIODES ; YELLOW LUMINESCENCE ; GROWTH ; HETEROSTRUCTURE ; NITRIDE
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000089269800004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428821
专题	半导体研究所
通讯作者	Xu, D
作者单位	Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xu, D,Yang, H,Zhang, SM,et al. Investigation on the origin of wurtzite domains in thick cubic gan using reactive ion etching[J]. Thin solid films,2000,372(1-2):25-29.
APA	Xu, D.,Yang, H.,Zhang, SM.,Zheng, LX.,Zhao, DG.,...&Wu, RH.(2000).Investigation on the origin of wurtzite domains in thick cubic gan using reactive ion etching.Thin solid films,372(1-2),25-29.
MLA	Xu, D,et al."Investigation on the origin of wurtzite domains in thick cubic gan using reactive ion etching".Thin solid films 372.1-2(2000):25-29.

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