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	The growth of si/sige/si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy
	Gao, F; Huang, DD; Li, JP; Lin, YX; Kong, MY; Li, JM; Zeng, YP; Lin, LY
刊名	Journal of crystal growth
	2000-12-01
卷号	220期号:4页码:457-460
关键词	Gsmbe Sige alloy Doping Sims Hbt Current gain
ISSN号	0022-0248
通讯作者	Gao, f()
英文摘要	Three n-p-n si/sige/si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (gsmbe) system using phosphine (ph3) and diborane (b2h6) as n-and p-type in situ doping sources, respectively. heterojunction bipolar transistors (hbts) have been fabricated using these structures and a current gain of 40 at 300 k and 62 at 77 k have been obtained. the influence of thickness and doping concentration of the deposited layers on the current gain of the hbts is discussed. (c) 2000 elsevier science b.v. all rights reserved.
WOS关键词	SI
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000165957500017
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428820
专题	半导体研究所
通讯作者	Gao, F
作者单位	Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Gao, F,Huang, DD,Li, JP,et al. The growth of si/sige/si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. Journal of crystal growth,2000,220(4):457-460.
APA	Gao, F.,Huang, DD.,Li, JP.,Lin, YX.,Kong, MY.,...&Lin, LY.(2000).The growth of si/sige/si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy.Journal of crystal growth,220(4),457-460.
MLA	Gao, F,et al."The growth of si/sige/si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy".Journal of crystal growth 220.4(2000):457-460.

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