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	Design consideration and performance of high-power and high-brightness ingaas-ingaasp-algaas quantum-well diode lasers (lambda=0.98 mu m)
	Yang, GW; Hwu, RJ; Xu, ZT; Ma, XY
刊名	Ieee journal of selected topics in quantum electronics
	2000-07-01
卷号	6期号:4页码:577-584
关键词	Quantum-well lasers Semiconductor diodes Semiconductor epitaxial layers Semiconductor lasers Semiconductor materials
ISSN号	1077-260X
通讯作者	Yang, gw()
英文摘要	In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, the material system of interest consists of an al-free ingaas-ingaasp active region and algaas cladding layers. some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. the laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. high-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. for 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 w-a, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 w, and a very high characteristic temperature coefficient of 250 k were achieved. lifetime tests performed at 1.2-1.3 w (12-13 mw/mum) demonstrates reliable performance. for 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mw and fundamental mode power up to 200 mw with slope efficiency of 0.91 mw/mum are obtained.
WOS关键词	OPERATION ; SINGLE
WOS研究方向	Engineering ; Optics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Optics ; Physics, Applied
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000165472800004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428783
专题	半导体研究所
通讯作者	Yang, GW
作者单位	1.Univ Utah, Dept Elect Engn, Salt Lake City, UT 84112 USA 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Yang, GW,Hwu, RJ,Xu, ZT,et al. Design consideration and performance of high-power and high-brightness ingaas-ingaasp-algaas quantum-well diode lasers (lambda=0.98 mu m)[J]. Ieee journal of selected topics in quantum electronics,2000,6(4):577-584.
APA	Yang, GW,Hwu, RJ,Xu, ZT,&Ma, XY.(2000).Design consideration and performance of high-power and high-brightness ingaas-ingaasp-algaas quantum-well diode lasers (lambda=0.98 mu m).Ieee journal of selected topics in quantum electronics,6(4),577-584.
MLA	Yang, GW,et al."Design consideration and performance of high-power and high-brightness ingaas-ingaasp-algaas quantum-well diode lasers (lambda=0.98 mu m)".Ieee journal of selected topics in quantum electronics 6.4(2000):577-584.

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