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	Effect of dopant on the uniformity of inas self-organized quantum dots
	Wang, HL; Zhu, HJ; Feng, SL; Ning, D; Wang, H; Wang, XD; Jiang, DS
刊名	Acta physica sinica-overseas edition
	1999-08-01
卷号	8期号:8页码:624-628
ISSN号	1004-423X
通讯作者	Wang, hl()
英文摘要	Low-temperature photoluminescence studies have been performed on si-doped and be-doped self-organized inas/gaas quantum dot (qd) samples to investigate the effect of doping. when si or be is doped into the sample, a remarkable decrease in line-width is observed. we relate this phenomenon to a model that takes the si or be atoms as the nucleation centers for the formation of qds. when si or be is doped, more small uniform quantum dots are formed. the result will be of significance for the application of self-organized inas quantum dots in semiconductor devices.
WOS关键词	INFRARED-ABSORPTION ; GROWTH ; GAAS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	GORDON BREACH SCI PUBL LTD
WOS记录号	WOS:000081700200010
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428684
专题	半导体研究所
通讯作者	Wang, HL
作者单位	Chinese Acad Sci, Natl Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, HL,Zhu, HJ,Feng, SL,et al. Effect of dopant on the uniformity of inas self-organized quantum dots[J]. Acta physica sinica-overseas edition,1999,8(8):624-628.
APA	Wang, HL.,Zhu, HJ.,Feng, SL.,Ning, D.,Wang, H.,...&Jiang, DS.(1999).Effect of dopant on the uniformity of inas self-organized quantum dots.Acta physica sinica-overseas edition,8(8),624-628.
MLA	Wang, HL,et al."Effect of dopant on the uniformity of inas self-organized quantum dots".Acta physica sinica-overseas edition 8.8(1999):624-628.

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