| Compensation ratio-dependent concentration of a vinh4 complex in n-type liquid encapsulated czochralski inp | |
| Fung, S; Zhao, YW; Beling, CD; Xu, XL; Gong, M; Sun, NF; Sun, TN; Chen, XD; Zhang, RG; Liu, SL | |
| 刊名 | Applied physics letters
 |
| 1998-08-01 | |
| 卷号 | 73期号:9页码:1275-1277 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Fung, s() |
| 英文摘要 | The concentration of hydroen-indium vacancy complex vinh4 in liquid encapsulated czochralski undoped and fe-doped n-type inp has been studied by low-temperature infrared absorption spectroscopy. the vinh4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to similar to 10(16) cm(-3) in as-grown liquid encapsulated czochralski inp. the concentration of the vinh4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of walukiewicz [w. walukiewicz, phys. rev. b 37, 4760 (1998); appl. phys. lett. 54, 2094 (1989)], which predicts a fermi-level-dependent concentration of amphoteric defects. (c) 1998 american institute of physics, [s0003-6951(98)04435-0]. |
| WOS关键词 | SEMICONDUCTORS ; HYDROGEN ; DEFECTS ; MECHANISM |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000083351600037 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2428615 |
| 专题 | 半导体研究所 |
| 通讯作者 | Fung, S |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China 2.Hebei Semicond Res Inst, Shijiazhuang, Hebei, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fung, S,Zhao, YW,Beling, CD,et al. Compensation ratio-dependent concentration of a vinh4 complex in n-type liquid encapsulated czochralski inp[J]. Applied physics letters,1998,73(9):1275-1277. |
| APA | Fung, S.,Zhao, YW.,Beling, CD.,Xu, XL.,Gong, M.,...&Liu, XL.(1998).Compensation ratio-dependent concentration of a vinh4 complex in n-type liquid encapsulated czochralski inp.Applied physics letters,73(9),1275-1277. |
| MLA | Fung, S,et al."Compensation ratio-dependent concentration of a vinh4 complex in n-type liquid encapsulated czochralski inp".Applied physics letters 73.9(1998):1275-1277. |
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