QQ客服 官方微博 反馈留言

	Ordered inas quantum dots in inalas matrix on (001) inp substrates grown by molecular beam epitaxy
	Li, HX; Wu, J; Xu, B; Liang, JB; Wang, ZG
刊名	Applied physics letters
	1998-04-27
卷号	72期号:17页码:2123-2125
ISSN号	0003-6951
通讯作者	Li, hx(hxli@red.semi.ac.cn)
英文摘要	Inas self-organized quantum dots in inalas matrix lattice-matched to exactly oriented (001) inp substrates were grown by solid source molecular beam epitaxy (mbe) using the stranski-krastanow mode. preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. the geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. at low deposition thickness. inas qds are arranged in chains along [1(1) over bar0$] directions. luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (c) 1998 american institute of physics.
WOS关键词	SELF-ORGANIZATION ; ISLANDS ; RECOMBINATION ; GAAS(100) ; SURFACE
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000073256700019
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428562
专题	半导体研究所
通讯作者	Li, HX
作者单位	Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Li, HX,Wu, J,Xu, B,et al. Ordered inas quantum dots in inalas matrix on (001) inp substrates grown by molecular beam epitaxy[J]. Applied physics letters,1998,72(17):2123-2125.
APA	Li, HX,Wu, J,Xu, B,Liang, JB,&Wang, ZG.(1998).Ordered inas quantum dots in inalas matrix on (001) inp substrates grown by molecular beam epitaxy.Applied physics letters,72(17),2123-2125.
MLA	Li, HX,et al."Ordered inas quantum dots in inalas matrix on (001) inp substrates grown by molecular beam epitaxy".Applied physics letters 72.17(1998):2123-2125.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。