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	Quantum confinement effect in silicon quantum-well layers
	Xia, JB; Cheah, KW
刊名	Physical review b
	1997-12-15
卷号	56期号:23页码:14925-14928
ISSN号	1098-0121
通讯作者	Xia, jb()
英文摘要	The electronic states and optical transition properties of silicon quantum-well layers embedded by sio2 layers are studied by the empirical pseudopotential homojunction model. the energy bands, wave functions, and the optical transition matrix elements are obtained for layers of thickness from 1 to 6 nm, and three oriented directions (001), (110), and (111). it is found that for si layers in the (001) direction the energy gap is pseudodirect, for these in the (111) direction the energy gap is indirect, while for those in the (110) direction the energy gap is pseudodirect or indirect for a thickness smaller or larger than 3 nm, respectively. the optical transition matrix elements are smaller than that of diner transition, and increase with decreasing layer thickness. when the thickness of a layer is smaller than 2 nm, the si qw layers have larger transition matrix elements. it is caused by mixing of bulk x states with the gamma(1) state. the calculated results are compared with experimental results.
WOS关键词	POROUS SILICON ; ELECTRONIC-STRUCTURE ; OPTICAL-PROPERTIES ; SIZE DEPENDENCE ; LUMINESCENCE ; WIRES ; SUPERLATTICES ; NANOCRYSTALS
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	AMERICAN PHYSICAL SOC
WOS记录号	WOS:000071043700015
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428514
专题	半导体研究所
通讯作者	Xia, JB
作者单位	1.Hong Kong Baptist Univ, Dept Phys, Kowloon, Hong Kong 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Xia, JB,Cheah, KW. Quantum confinement effect in silicon quantum-well layers[J]. Physical review b,1997,56(23):14925-14928.
APA	Xia, JB,&Cheah, KW.(1997).Quantum confinement effect in silicon quantum-well layers.Physical review b,56(23),14925-14928.
MLA	Xia, JB,et al."Quantum confinement effect in silicon quantum-well layers".Physical review b 56.23(1997):14925-14928.

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