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	Effect of aln buffer thickness on gan epilayer grown on si(1 1 1)
	Wei, Meng1; Wang, Xiaoliang1,2; Pan, Xu1; Xiao, Hongling1,2; Wang, CuiMei1,2; Hou, Qifeng1; Wang, Zhanguo2
刊名	Materials science in semiconductor processing
	2011-06-01
卷号	14期号:2页码:97-100
关键词	Gan Mocvd Si(111) Aln
ISSN号	1369-8001
DOI	10.1016/j.mssp.2011.01.006
通讯作者	Wei, meng(mengw@semi.ac.cn)
英文摘要	We studied the influence of high temperature aln buffer thickness on the property of gan film on si (1 1 1) substrate. samples were grown by metal organic chemical vapor deposition. optical microscopy, atomic force microscopy and x-ray diffraction were employed to characterize the samples. the results demonstrated that thickness of high temperature aln buffer prominently influenced the morphology and the crystal quality of gan epilayer. the optimized thickness of the aln buffer is found to be about 150 nm. under the optimized thickness, the largest crack-free range of gan film is 10 mm x 10 mm and the full width at half maximum of gan (0 0 0 2) rocking curve peak is 621.7 arcsec. using high temperature aln/algan multibuffer combined with aln/gan superlattices interlayer we have obtained 2 mu m crack-free gan epilayer on 2 in si (1 1 1) substrates. (c) 2011 elsevier ltd. all rights reserved.
WOS关键词	VAPOR-PHASE EPITAXY ; LAYERS ; SUBSTRATE ; MOCVD ; STRESS
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000292408500003
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428477
专题	半导体研究所
通讯作者	Wei, Meng
作者单位	1.Chinese Acad Sci, Inst Semicond, Mat Sci Ctr, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wei, Meng,Wang, Xiaoliang,Pan, Xu,et al. Effect of aln buffer thickness on gan epilayer grown on si(1 1 1)[J]. Materials science in semiconductor processing,2011,14(2):97-100.
APA	Wei, Meng.,Wang, Xiaoliang.,Pan, Xu.,Xiao, Hongling.,Wang, CuiMei.,...&Wang, Zhanguo.(2011).Effect of aln buffer thickness on gan epilayer grown on si(1 1 1).Materials science in semiconductor processing,14(2),97-100.
MLA	Wei, Meng,et al."Effect of aln buffer thickness on gan epilayer grown on si(1 1 1)".Materials science in semiconductor processing 14.2(2011):97-100.

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