Native p-type transparent conductive cui via intrinsic defects | |
Wang, Jing1,2,3; Li, Jingbo1; Li, Shu-Shen1 | |
刊名 | Journal of applied physics |
2011-09-01 | |
卷号 | 110期号:5页码:5 |
ISSN号 | 0021-8979 |
DOI | 10.1063/1.3633220 |
通讯作者 | Li, jingbo(jbli@semi.ac.cn) |
英文摘要 | The ability of cui to be doped p-type via the introduction of native defects has been investigated using first-principles pseudopotential calculations based on density functional theory. the cu vacancy has a lower formation energy than any of the other native defects, which include i vacancy (v(i)), cu interstitial (cu(i)), i interstitial (i(i)), cu antisite (cu(i)), and i antisite (i(cu)). combined with its shallow acceptor level, it offers sufficient hole concentrations in cui. the natural band alignments as compared to zinc-blende zns, znse, and znte have also been calculated in order to further identify the p-type dopability of cui. it is found that cui has a relatively high valence band maximum and conduction band minimum, which also makes it easy to dope cui p-type in terms of the doping limit rule. in addition, the small effective mass of the light hole-about 0.303m(0)-can provide high mobility and p-type conductivity in cui. all of these results make cui an ideal candidate for native p-type materials (c) 2011 american institute of physics. [doi:10.1063/1.3633220] |
WOS关键词 | HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS ; AUGMENTED-WAVE METHOD ; COPPER HALIDES ; BAND-STRUCTURE ; II-VI ; SEMICONDUCTORS ; EMISSION ; DIAMOND ; CUBR ; CUCL |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000294968600160 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2428464 |
专题 | 半导体研究所 |
通讯作者 | Li, Jingbo |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China 3.Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050016, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Jing,Li, Jingbo,Li, Shu-Shen. Native p-type transparent conductive cui via intrinsic defects[J]. Journal of applied physics,2011,110(5):5. |
APA | Wang, Jing,Li, Jingbo,&Li, Shu-Shen.(2011).Native p-type transparent conductive cui via intrinsic defects.Journal of applied physics,110(5),5. |
MLA | Wang, Jing,et al."Native p-type transparent conductive cui via intrinsic defects".Journal of applied physics 110.5(2011):5. |
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