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	Growth of gan film on si (111) substrate using aln sandwich structure as buffer
	Pan, Xu1; Wei, Meng1; Yang, Cuibai1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Wang, Xiaoliang1,2
刊名	Journal of crystal growth
	2011-03-01
卷号	318期号:1页码:464-467
关键词	Sandwich structure Stress Aluminum nitride Gallium nitride Silicon
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2010.10.173
通讯作者	Pan, xu(xpan@semi.ac.cn)
英文摘要	A single high temperature aln (ht-aln) buffer has been used to relieve the stress in the growth of gan epilayers on si (1 1 1) substrates, but the growth of crack-free gan on si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (cte) between gan and si. in this paper, we report the growth of 1.2 mu m thick crack-free gan epilayers on 2 in. si (1 1 1) substrates using the aln sandwich structure as a buffer. the surface morphologies of the samples were observed using a microscope and afm. further analysis shows that the crack-free sample is closely correlated to the introduction of the aln sandwich structure as the buffer. to better understand the relationship between the cracks and the stress, raman scattering has been used to study the stress in the samples. the results indicate that the sandwich structure with top aln and bottom aln can more effectively accommodate the strain energy caused by cte mismatch stress. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	PHONON DEFORMATION POTENTIALS ; WURTZITE ALN ; SILICON ; STRESS ; TRANSISTORS ; EPITAXY ; LAYERS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000289653900097
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428381
专题	半导体研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100864, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wei, Meng,Yang, Cuibai,et al. Growth of gan film on si (111) substrate using aln sandwich structure as buffer[J]. Journal of crystal growth,2011,318(1):464-467.
APA	Pan, Xu,Wei, Meng,Yang, Cuibai,Xiao, Hongling,Wang, Cuimei,&Wang, Xiaoliang.(2011).Growth of gan film on si (111) substrate using aln sandwich structure as buffer.Journal of crystal growth,318(1),464-467.
MLA	Pan, Xu,et al."Growth of gan film on si (111) substrate using aln sandwich structure as buffer".Journal of crystal growth 318.1(2011):464-467.

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