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	Formation of silicon nanocrystals embedded in high-kappa dielectric hfo2 and their application for charge storage
	Li, Weilong1; Jia, Rui1; Chen, Chen1; Li, Haofeng1; Liu, Xinyu1; Yue, Huihui1; Ding, Wuchang1; Ye, Tianchun1; Kasai, Seiya2; Hashizume, Tamotsu2
刊名	Journal of vacuum science & technology b
	2011-03-01
卷号	29期号:2页码:6
ISSN号	1071-1023
DOI	10.1116/1.3554736
通讯作者	Jia, rui(jiarui@ime.ac.cn)
英文摘要	Annealing thin films of silicon containing hfo2 films deposited by an electron-beam coevaporation produces silicon nanocrystals embedded in high-kappa dielectric hfo2. such films can be used to fabricate nonvolatile memory devices. by changing the si content in the precursor hfsixo2 (x=1, 2, 3, or 4) film, the size and density of silicon nanocrystal could be controlled and high-density of silicon nanocrystals could be obtained. transmission electron microscopy observations showed that the maximum density of silicon nanocrystals was as high as 1.3 x 10(13) cm(-2) for hfsi4o2 and the average nanocrystal diameter was 4.3 nm. the metal-oxide semiconductor capacitor memory structure with embedded silicon nanocrystals in hfsi4o2 exhibited the largest memory window, 3.94 v under +/- 5 v sweep voltage. (c) 2011 american vacuum society. [doi: 10.1116/1.3554736]
WOS关键词	MEMORY APPLICATION ; SI NANOCRYSTALS ; TECHNOLOGY ; DEPOSITION ; VOLTAGE ; LAYER
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
语种	英语
出版者	A V S AMER INST PHYSICS
WOS记录号	WOS:000289166000023
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428315
专题	半导体研究所
通讯作者	Jia, Rui
作者单位	1.Chinese Acad Sci, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China 2.Hokkaido Univ, Res Ctr Integrated Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan 3.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China 4.Taiyuan Univ Technol, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China
推荐引用方式 GB/T 7714	Li, Weilong,Jia, Rui,Chen, Chen,et al. Formation of silicon nanocrystals embedded in high-kappa dielectric hfo2 and their application for charge storage[J]. Journal of vacuum science & technology b,2011,29(2):6.
APA	Li, Weilong.,Jia, Rui.,Chen, Chen.,Li, Haofeng.,Liu, Xinyu.,...&Xu, Bingshe.(2011).Formation of silicon nanocrystals embedded in high-kappa dielectric hfo2 and their application for charge storage.Journal of vacuum science & technology b,29(2),6.
MLA	Li, Weilong,et al."Formation of silicon nanocrystals embedded in high-kappa dielectric hfo2 and their application for charge storage".Journal of vacuum science & technology b 29.2(2011):6.

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