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	Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy
	Zhao, Jie1,2; Zeng, Yiping1,2; Yang, Qiumin1,2; Li, Yiyang1,2; Cui, Lijie1,2; Liu, Chao1,2
刊名	Journal of crystal growth
	2011-08-15
卷号	329期号:1页码:1-5
关键词	Reflection high-energy electron diffraction X-ray diffraction Atomic force microscopy Molecular beam epitaxy Cadmium compounds Semiconducting ii-vi materials
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2011.06.029
通讯作者	Zhao, jie(jiezhao@semi.ac.cn)
英文摘要	Cdse epilayers were grown on gaas(0 0 1) substrates by molecular beam epitaxy (mbe) in a wide range of vi/ii beam-equivalent-pressure (bep) ratio from 1.1 to 8.5. x-ray diffraction (xrd) theta-2 theta scan reveals all the cdse samples possess cubic zinc blende structure with (0 0 1) orientation. the film grown at a low vi/ii ratio of 1.1 has rough surface with a three-dimensional (3d) growth mode, while two-dimensional (2d) growth can be established under se-rich conditions at higher se/cd bep ratios over 4.4. the growth rate increases monotonically with the vi/ii ratio and becomes saturated when the ratio is raised to 8.5. the sample grown at a vi/ii ratio of 8.5 shows the narrowest full-width at half-maximum (fwhm) of x-ray rocking curve (xrc) for (0 0 4) reflection. no near-band-edge (nbe) emission of cdse is observed for the sample prepared at a low ratio of 1.1. the nbe emission from cubic cdse at around 1.67 ev appears and its intensity is markedly enhanced by elevating the vi/ii ratio. it is suggested that cdse epilayer with good structural and optical properties can be prepared under a large vi/ii bep ratio. (c) 2011 elsevier b.v. all rights reserved.
WOS关键词	ZINC BLENDE CDSE ; THIN-FILMS ; OPTICAL-PROPERTIES ; DEPOSITION ; ZNSE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000294104500001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428263
专题	半导体研究所
通讯作者	Zhao, Jie
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Jie,Zeng, Yiping,Yang, Qiumin,et al. Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy[J]. Journal of crystal growth,2011,329(1):1-5.
APA	Zhao, Jie,Zeng, Yiping,Yang, Qiumin,Li, Yiyang,Cui, Lijie,&Liu, Chao.(2011).Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy.Journal of crystal growth,329(1),1-5.
MLA	Zhao, Jie,et al."Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy".Journal of crystal growth 329.1(2011):1-5.

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