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	The transport mechanism of gate leakage current in algan/gan high electron mobility transistors
	Lin, D. F.1; Wang, X. L.1,2,3; Xiao, H. L.1,2; Wang, C. M.1,2; Jiang, L. J.1,2; Feng, C.1,2; Chen, H.1,2; Hou, Q. F.1; Deng, Q. W.1; Bi, Y.1
刊名	European physical journal-applied physics
	2011-09-01
卷号	55期号:3页码:5
ISSN号	1286-0042
DOI	10.1051/epjap/2011110209
通讯作者	Lin, d. f.(dflin@semi.ac.cn)
英文摘要	The temperature dependence of the i-v characteristics on au/ni-hemt schottky contacts was measured and analyzed. large deviations from the thermionic emission and thermionic-field emission model were observed in the i-v-t characteristics. the thin surface barrier model only fits the measured curves in the high bias region, but deviates drastically in the low bias region. using a revised thin surface barrier model, the calculated curves match well with the measured curves. it is also found that tunneling emission model is the dominant current transport mechanism at low temperature, yet thermionic-field emission model is the dominant current transport mechanism at high temperature.
WOS关键词	GAN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	CAMBRIDGE UNIV PRESS
WOS记录号	WOS:000294009500004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428246
专题	半导体研究所
通讯作者	Lin, D. F.
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Lin, D. F.,Wang, X. L.,Xiao, H. L.,et al. The transport mechanism of gate leakage current in algan/gan high electron mobility transistors[J]. European physical journal-applied physics,2011,55(3):5.
APA	Lin, D. F..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Jiang, L. J..,...&Kang, H..(2011).The transport mechanism of gate leakage current in algan/gan high electron mobility transistors.European physical journal-applied physics,55(3),5.
MLA	Lin, D. F.,et al."The transport mechanism of gate leakage current in algan/gan high electron mobility transistors".European physical journal-applied physics 55.3(2011):5.

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