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	Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition
	Gupta, Shalini1; Zaidi, Tahir1; Melton, Andrew1; Malguth, Enno1; Yu, Hongbo1; Liu, Zhiqiang2,3; Liu, Xiaotao4; Schwartz, Justin4; Ferguson, Ian T.1,2,5
刊名	Journal of applied physics
	2011-10-15
卷号	110期号:8页码:5
ISSN号	0021-8979
DOI	10.1063/1.3656019
通讯作者	Ferguson, ian t.(ianf@uncc.edu)
英文摘要	This paper presents the first report on gd doping (0%-4%) of gan thin films by metal organic chemical vapor deposition. the ga1-xgdxn films grown in this study were found to be of good crystalline quality, single-phase, and unstrained, with a high saturation magnetization strength of 20 emu/cm(3) being obtained for gan films doped with 2% gd at room temperature. furthermore, these films were found to be conductive with an enhanced n-type behavior suggesting that unintentional donors are responsible for stabilizing the ferromagnetic phase in as-grown ga1-xgdxn. additionally, it was found that this magnetization can be enhanced by n-(si: 10(18) cm(-3)) and p-(mg: 10(19) cm(-3)) doping to 110 emu/cm(3) and similar to 500 emu/cm(3), respectively. this paper shows empirically that holes are more efficient in stabilizing the ferromagnetic phase as compared to electrons. overall, this research has resulted in a room temperature ferromagnetic dilute magnetic semiconductor that is conductive and whose magnetic properties can be tuned by carrier doping thus providing a path towards realizing spintronic devices. (c) 2011 american institute of physics. [doi:10.1063/1.3656019]
WOS关键词	FERROMAGNETIC PROPERTIES ; SEMICONDUCTORS ; GAN ; GAGDN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000296519900102
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428204
专题	半导体研究所
通讯作者	Ferguson, Ian T.
作者单位	1.Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA 2.Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA 3.Chinese Acad Sci, Inst Semicond, Semicond Lighting R&D Ctr, Beijing 100083, Peoples R China 4.N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27518 USA 5.Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
推荐引用方式 GB/T 7714	Gupta, Shalini,Zaidi, Tahir,Melton, Andrew,et al. Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition[J]. Journal of applied physics,2011,110(8):5.
APA	Gupta, Shalini.,Zaidi, Tahir.,Melton, Andrew.,Malguth, Enno.,Yu, Hongbo.,...&Ferguson, Ian T..(2011).Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition.Journal of applied physics,110(8),5.
MLA	Gupta, Shalini,et al."Electrical and magnetic properties of ga1-xgdxn grown by metal organic chemical vapor deposition".Journal of applied physics 110.8(2011):5.

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