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	Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate
	Zheng, Jun; Tao, Yeliao; Wang, Wei; Zhang, Lingzi; Zuo, Yuhua; Xue, Chunlai; Cheng, Buwen; Wang, Qiming
刊名	Materials letters
	2011-03-15
卷号	65期号:5页码:860-862
关键词	Luminescence Optical materials and properties Sputtering Thin films
ISSN号	0167-577X
DOI	10.1016/j.matlet.2010.11.067
通讯作者	Zheng, jun(zhengjun@semi.ac.cn)
英文摘要	Erxyb2-xsi2o7 thin films were grown on sio2/si substrate by sputtering method and subsequent annealing process. by introducing yb3+ into the lattices, the 1.53 mu m emission intensity in erxyb2-xsi2o7 is enhanced about 15 times, compared with er2si2o7. decay time measurements further show that the lifetime at 1.53 mu m is about 3.9 ms at the er concentration of 2 at.%, where the concentration is one order higher than the solubility limit of er3+ in silica (10(20) cm(-3)). our results indicate that such disilicate may have potential application for high-gain, compact waveguide amplifiers. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	PHOTOLUMINESCENCE ; ER3+
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000288311800016
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428153
专题	半导体研究所
通讯作者	Zheng, Jun
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zheng, Jun,Tao, Yeliao,Wang, Wei,et al. Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate[J]. Materials letters,2011,65(5):860-862.
APA	Zheng, Jun.,Tao, Yeliao.,Wang, Wei.,Zhang, Lingzi.,Zuo, Yuhua.,...&Wang, Qiming.(2011).Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate.Materials letters,65(5),860-862.
MLA	Zheng, Jun,et al."Highly efficient 1.53 mu m luminescence in erxyb2-xsi2o7 thin films grown on si substrate".Materials letters 65.5(2011):860-862.

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