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	Fabrication of gan nanowires on pd-coated sapphire substrates by magnetron sputtering technique
	Guo, Y. F.; Xue, C. S.; Liu, W. J.; Sun, H. B.; Cao, Y. P.
刊名	Materials characterization
	2010-04-01
卷号	61期号:4页码:381-385
关键词	Nanowires Semiconductor Sputtering Photoluminescence
ISSN号	1044-5803
DOI	10.1016/j.matchar.2010.01.001
通讯作者	Xue, c. s.()
英文摘要	Large-scale gan nanowires were successfully synthesized through ammoniating ga(2)o(3)/pd films sputtered on the sapphire(001) substrates x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and raman spectrum were used to characterize the specimens the results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. raman scattering appears broadened and asymmetric compared with those of bulk gan due to its polycrystalline nature in addition, the growth mechanism of gan nanowires is briefly discussed (c) 2010 elsevier inc all rights reserved
WOS关键词	GALLIUM NITRIDE NANOWIRES ; CATALYTIC GROWTH ; PHOTOLUMINESCENCE ; NANORODS
WOS研究方向	Materials Science
WOS类目	Materials Science, Characterization & Testing
语种	英语
出版者	ELSEVIER SCIENCE INC
WOS记录号	WOS:000277105300001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427851
专题	半导体研究所
通讯作者	Xue, C. S.
作者单位	Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Guo, Y. F.,Xue, C. S.,Liu, W. J.,et al. Fabrication of gan nanowires on pd-coated sapphire substrates by magnetron sputtering technique[J]. Materials characterization,2010,61(4):381-385.
APA	Guo, Y. F.,Xue, C. S.,Liu, W. J.,Sun, H. B.,&Cao, Y. P..(2010).Fabrication of gan nanowires on pd-coated sapphire substrates by magnetron sputtering technique.Materials characterization,61(4),381-385.
MLA	Guo, Y. F.,et al."Fabrication of gan nanowires on pd-coated sapphire substrates by magnetron sputtering technique".Materials characterization 61.4(2010):381-385.

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