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	Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films
	Yang Zhaozhu; Xue Chengahan; Zhuang Huizhao; Wang Gongtang; Chen Jinhua; Li Hong; Qin Lixia; Wang Zouping
刊名	Rare metal materials and engineering
	2009-03-01
卷号	38期号:3页码:377-379
关键词	Magnetron sputtering Gan Nanowires Photoluminescence
ISSN号	1002-185X
通讯作者	Xue chengahan(xuechengshan@sdnu.edu.en)
英文摘要	Large-scale gan nanowires were synthesized on si(111) substrates through ammoniating ga2o3/v films. the as-grown products were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem) and transmission electron microscopy (tem). the results reveal that the grown gan nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths of about several tens of micrometers. the results of hrtem and selected-area electron diffraction (saed) show that the nanowires are pure hexagonal gan single crystal. the photoluminescence (pl) spectrum indicates that the gan nanowires have good emission property. the growth mechanism is discussed briefly.
WOS关键词	GALLIUM NITRIDE NANOWIRES ; LIGHT-EMITTING-DIODES ; CATALYTIC GROWTH
WOS研究方向	Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	NORTHWEST INST NONFERROUS METAL RESEARCH
WOS记录号	WOS:000265112900001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427672
专题	半导体研究所
通讯作者	Xue Chengahan
作者单位	Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Yang Zhaozhu,Xue Chengahan,Zhuang Huizhao,et al. Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films[J]. Rare metal materials and engineering,2009,38(3):377-379.
APA	Yang Zhaozhu.,Xue Chengahan.,Zhuang Huizhao.,Wang Gongtang.,Chen Jinhua.,...&Wang Zouping.(2009).Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films.Rare metal materials and engineering,38(3),377-379.
MLA	Yang Zhaozhu,et al."Synthesis of large-scale gan nanowires by ammoniating ga2o3/v films".Rare metal materials and engineering 38.3(2009):377-379.

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