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	Dielectric relaxation and giant dielectric constant of nb-doped cacu(3)ti(4)o(12) ceramics under dc bias voltage
	Liu, Peng1; He, Ying2; Zhou, Jian-ping1,3; Mu, Chun-hong2; Zhang, Huai-wu2
刊名	Physica status solidi a-applications and materials science
	2009-03-01
卷号	206期号:3页码:562-566
ISSN号	1862-6300
DOI	10.1002/pssa.200824277
通讯作者	Liu, peng(liupeng@snnu.edu.cn)
英文摘要	Cacu3ti(4-x)nb(x)o(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. the ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with nb doping. two debye-type relaxations were observed for the nb-doped samples at low frequency and high frequency, respectively. the complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. the low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. the shift voltage v(b) corresponding to the minimal capacitance increased with increase of the composition x. (c) 2009 wiley-vch verlag gmbh & co. kgaa, weinheim.
WOS关键词	COPPER-TITANATE ; GRAIN-BOUNDARY ; BEHAVIOR
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	WILEY-V C H VERLAG GMBH
WOS记录号	WOS:000264691800024
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427511
专题	半导体研究所
通讯作者	Liu, Peng
作者单位	1.Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710062, Peoples R China 2.Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, Peng,He, Ying,Zhou, Jian-ping,et al. Dielectric relaxation and giant dielectric constant of nb-doped cacu(3)ti(4)o(12) ceramics under dc bias voltage[J]. Physica status solidi a-applications and materials science,2009,206(3):562-566.
APA	Liu, Peng,He, Ying,Zhou, Jian-ping,Mu, Chun-hong,&Zhang, Huai-wu.(2009).Dielectric relaxation and giant dielectric constant of nb-doped cacu(3)ti(4)o(12) ceramics under dc bias voltage.Physica status solidi a-applications and materials science,206(3),562-566.
MLA	Liu, Peng,et al."Dielectric relaxation and giant dielectric constant of nb-doped cacu(3)ti(4)o(12) ceramics under dc bias voltage".Physica status solidi a-applications and materials science 206.3(2009):562-566.

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