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	An evidence of defect gettering in gan
	Majid, Abdul1,2; Ali, Akbar1; Zhu, J. J.2; Wang, Y. T.2; Yang, H.2
刊名	Physica b-condensed matter
	2008-07-01
卷号	403期号:13-16页码:2495-2499
关键词	Gan Impurities Implantation Photoluminescence Gettering
ISSN号	0921-4526
DOI	10.1016/j.physb.2008.01.012
通讯作者	Ali, akbar(akbar@qau.edu.pk)
英文摘要	The effect of neon ion implantation on the structural and optical properties of mocvd grown gan was studied. x-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 degrees c. the peak at 3.41 ev exhibited an interesting behavior in as-grown and the implanted samples. annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. implantation dose of 5 x 10(15) ions/cm(2) caused the complete quenching of yellow band luminescence. (c) 2008 elsevier b.v. all rights reserved.
WOS关键词	OPTICAL-PROPERTIES ; III-NITRIDES ; LUMINESCENCE ; PHOTOLUMINESCENCE ; IMPLANTATION ; BUBBLES ; EPITAXY ; GROWTH
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000257627300050
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427488
专题	半导体研究所
通讯作者	Ali, Akbar
作者单位	1.Quaid I Azam Univ, Adv Mat Phys Lab, Dept Phys, Islamabad, Pakistan 2.Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Majid, Abdul,Ali, Akbar,Zhu, J. J.,et al. An evidence of defect gettering in gan[J]. Physica b-condensed matter,2008,403(13-16):2495-2499.
APA	Majid, Abdul,Ali, Akbar,Zhu, J. J.,Wang, Y. T.,&Yang, H..(2008).An evidence of defect gettering in gan.Physica b-condensed matter,403(13-16),2495-2499.
MLA	Majid, Abdul,et al."An evidence of defect gettering in gan".Physica b-condensed matter 403.13-16(2008):2495-2499.

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