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	Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111)
	Yang, Zhaozhu; Xue, Chengshan; Zhuang, Huizhao; Qin, Lixia; Chen, Jinhua; Li, Hong; Zhang, Dongdong
刊名	Applied surface science
	2008-04-30
卷号	254期号:13页码:4166-4170
关键词	Gan Magnetron sputtering Ammoniating Vls mechanism
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2007.12.043
通讯作者	Xue, chengshan(xuechengshan@sdnu.edu.cn)
英文摘要	Gan nanowires and nanorods have been successfully synthesized on si(1 1 1) substrates by magnetron sputtering through ammoniating ga2o3/v films at 900 degrees c in a quartz tube. x-ray diffraction (xrd), scanning electron microscopy (sem), high-resolution transmission electron microscopy (hrtem), x-ray photoelectron spectroscopy (xps), and photoluminescence (pl) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of gan sample. the results show that the gan nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. the growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. the growth mechanism is also briefly discussed. (c) 2008 published by elsevier b.v.
WOS关键词	GALLIUM NITRIDE ; LASER-ABLATION ; DEPOSITION ; NANOBELTS ; EPITAXY ; GROWTH
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000255344500068
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427244
专题	半导体研究所
通讯作者	Xue, Chengshan
作者单位	Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Yang, Zhaozhu,Xue, Chengshan,Zhuang, Huizhao,et al. Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111)[J]. Applied surface science,2008,254(13):4166-4170.
APA	Yang, Zhaozhu.,Xue, Chengshan.,Zhuang, Huizhao.,Qin, Lixia.,Chen, Jinhua.,...&Zhang, Dongdong.(2008).Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111).Applied surface science,254(13),4166-4170.
MLA	Yang, Zhaozhu,et al."Fabrication, morphology, and photoluminescence properties of gan nanowires and nanorods by ammoniating ga2o3/v films on si(111)".Applied surface science 254.13(2008):4166-4170.

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