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	Influence of aln thickness on strain evolution of gan layer grown on high-temperature aln interlayer
	Liu, W.; Wang, J. F.; Zhu, J. J.; Jiang, D. S.; Yang, H.
刊名	Journal of physics d-applied physics
	2007-09-07
卷号	40期号:17页码:5252-5255
ISSN号	0022-3727
DOI	10.1088/0022-3727/40/17/036
通讯作者	Liu, w.(liuwei@red.semi.ac.cn)
英文摘要	The strain evolution of a gan layer grown on a high- temperature aln interlayer with varying aln thickness by metalorganic chemical vapour deposition is investigated. in the growth process, the growth strain changes from compression to tension in the top gan layer, and the thickness at which the compressive- to- tensile strain transition takes place is strongly influenced by the thickness of the aln interlayer. it is confirmed from the x- ray diffraction results that the aln interlayer has a remarkable effect on introducing relative compressive strain to the top gan layer. the strain transition process during the growth of the top gan layer can be explained by the threading dislocation inclination in the top gan layer. adjusting the aln interlayer thickness could change the density of the threading dislocations in the top gan layer and then change the stress evolution during the top gan layer's growth.
WOS关键词	STRESS ; ALGAN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000248785700036
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427020
专题	半导体研究所
通讯作者	Liu, W.
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, W.,Wang, J. F.,Zhu, J. J.,et al. Influence of aln thickness on strain evolution of gan layer grown on high-temperature aln interlayer[J]. Journal of physics d-applied physics,2007,40(17):5252-5255.
APA	Liu, W.,Wang, J. F.,Zhu, J. J.,Jiang, D. S.,&Yang, H..(2007).Influence of aln thickness on strain evolution of gan layer grown on high-temperature aln interlayer.Journal of physics d-applied physics,40(17),5252-5255.
MLA	Liu, W.,et al."Influence of aln thickness on strain evolution of gan layer grown on high-temperature aln interlayer".Journal of physics d-applied physics 40.17(2007):5252-5255.

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