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	Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors
	Zhang, Wancheng; Nishiguchi, Katsuhiko; Ono, Yukinori; Fujiwara, Akira; Yamaguchi, Hiroshi; Inokawa, Hiroshi; Takahashi, Yasuo; Wu, Nan-Jian
刊名	Ieice transactions on electronics
	2007-05-01
卷号	E90c期号:5页码:943-948
关键词	Single-electron Mosfet Turnstile Single-electron detection
ISSN号	0916-8524
DOI	10.1093/ietele/e90-c.5.943
通讯作者	Zhang, wancheng()
英文摘要	A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. the turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (mosfets) alternately, allows current quantization at 20 k due to single-electron transfer. another mosfet is placed at the drain side of the turnstile to form an electron storage island. therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. the correspondence between the quantized current and the single-electron counting was confirmed.
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
语种	英语
出版者	IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
WOS记录号	WOS:000246819000006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426998
专题	半导体研究所
通讯作者	Zhang, Wancheng
作者单位	1.NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan 4.Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan
推荐引用方式 GB/T 7714	Zhang, Wancheng,Nishiguchi, Katsuhiko,Ono, Yukinori,et al. Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors[J]. Ieice transactions on electronics,2007,E90c(5):943-948.
APA	Zhang, Wancheng.,Nishiguchi, Katsuhiko.,Ono, Yukinori.,Fujiwara, Akira.,Yamaguchi, Hiroshi.,...&Wu, Nan-Jian.(2007).Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors.Ieice transactions on electronics,E90c(5),943-948.
MLA	Zhang, Wancheng,et al."Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors".Ieice transactions on electronics E90c.5(2007):943-948.

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