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	Photoluminescence degradation in gan induced by light enhanced surface oxidation
	Liu, Wenbao; Sun, Xian; Zhang, Shuang; Chen, Jun; Wang, Hui; Wang, Xiaolan; Zhao, Degang; Yang, Hui
刊名	Journal of applied physics
	2007-10-01
卷号	102期号:7页码:3
ISSN号	0021-8979
DOI	10.1063/1.2786617
通讯作者	Liu, wenbao(wbliu@semi.ac.cn)
英文摘要	The exponential degradation of the photoluminescence (pl) intensity at the near-band-gap was observed in heavily doped or low-quality gan with pristine surface under continuous helium-cadmium laser excitation. in doped gan samples, the degradation speed increased with doping concentration. the oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. the oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of ga 3d binding energy. the reason for pl degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination.
WOS关键词	GAAS ; SPECTROSCOPY ; MODEL
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000250147700181
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426939
专题	半导体研究所
通讯作者	Liu, Wenbao
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, Wenbao,Sun, Xian,Zhang, Shuang,et al. Photoluminescence degradation in gan induced by light enhanced surface oxidation[J]. Journal of applied physics,2007,102(7):3.
APA	Liu, Wenbao.,Sun, Xian.,Zhang, Shuang.,Chen, Jun.,Wang, Hui.,...&Yang, Hui.(2007).Photoluminescence degradation in gan induced by light enhanced surface oxidation.Journal of applied physics,102(7),3.
MLA	Liu, Wenbao,et al."Photoluminescence degradation in gan induced by light enhanced surface oxidation".Journal of applied physics 102.7(2007):3.

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