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	Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer
	Wei, T. B.; Duan, R. F.; Wang, J. X.; Li, J. M.; Huo, Z. Q.; Ma, P.; Liu, Zh.; Zeng, Y. P.
刊名	Applied surface science
	2007-07-15
卷号	253期号:18页码:7423-7428
关键词	Gan Hvpe Cathodoluminescence Micro-raman scattering
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2007.03.030
通讯作者	Wei, t. b.(tbwei@semi.ac.cn)
英文摘要	Large-scale gan free-standing substrate was obtained by hydride vapor phase epitaxy directly on sapphire with porous network interlayer. the bottom surface n-face and top surface ga-face showed great difference in anti-etching and optical properties. the variation of optical and structure characteristics were also microscopically identified using spatially resolved cathodoluminescence and micro-raman spectroscopy in cross-section of the gan substrate. three different regions were separated according to luminescent intensity along the film growth orientation. some tapered inversion domains with high free carrier concentration of 5 x 10(19) cm(-3) protruded up to the surface forming the hexagonal pits. the dark region of upper layer showed good crystalline quality with narrow donor bound exciton peak and low free carrier concentration. unlike the exponential dependence of the strain distribution, the free-standing gan substrate revealed a gradual increase of the strain mainly within the near n-polar side region with a thickness of about 50 mu m, then almost kept constant to the top surface. (c) 2007 elsevier b.v. all rights reserved.
WOS关键词	FREE-CARRIER CONCENTRATION ; INVERSION DOMAIN ; OVERGROWN GAN ; FILMS ; CATHODOLUMINESCENCE ; NONUNIFORMITIES ; BOUNDARIES ; SAPPHIRE ; POLARITY ; WAFERS
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000247863800013
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426906
专题	半导体研究所
通讯作者	Wei, T. B.
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wei, T. B.,Duan, R. F.,Wang, J. X.,et al. Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer[J]. Applied surface science,2007,253(18):7423-7428.
APA	Wei, T. B..,Duan, R. F..,Wang, J. X..,Li, J. M..,Huo, Z. Q..,...&Zeng, Y. P..(2007).Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer.Applied surface science,253(18),7423-7428.
MLA	Wei, T. B.,et al."Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer".Applied surface science 253.18(2007):7423-7428.

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