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	Evolution of the amount of inas in wetting layers in an inas/gaas quantum-dot system studied by reflectance difference spectroscopy
	Chen, YH; Jin, P; Liang, LY; Ye, XL; Wang, ZG; Martinez, AI
刊名	Nanotechnology
	2006-05-14
卷号	17期号:9页码:2207-2211
ISSN号	0957-4484
DOI	10.1088/0957-4484/17/9/022
通讯作者	Chen, yh(yhchen@red.semi.ac.cn)
英文摘要	The wetting layer (wl) in inas/gaas quantum-dot systems has been studied by reflectance difference spectroscopy (rds). two structures related to the heavy-hole (hh) and light-hole (lh) related transitions in the wl have been observed. on the basis of a calculation model that takes into account the segregation effect and exciton binding energies, the amount of inas in the wl (t(wl)) and its segregation coefficient ( r) have been determined from the hh and lh transition energies. the evolutions of twl and r exhibit a close relation to the growth modes. before the formation of inas dots, t(wl) increases linearly from similar to 1 to similar to 1.6 monolayer (ml), while r increases almost linearly from similar to 0.8 to similar to 0.85. after the onset of dot formation, t(wl) is saturated at similar to 1.6 ml and r decreases slightly from 0.85 to 0.825. the variation of twl can be interpreted by using an equilibrium model. different variations of in-plane optical anisotropy before and after dot formation have been observed.
WOS关键词	SCANNING-TUNNELING-MICROSCOPY ; ANISOTROPY SPECTROSCOPY ; GROWTH ; GAAS ; SURFACES ; ALAS
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000238220900023
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426734
专题	半导体研究所
通讯作者	Chen, YH
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Natl Autonomous Univ Mexico, Inst Phys, Mexico City 04510, DF, Mexico
推荐引用方式 GB/T 7714	Chen, YH,Jin, P,Liang, LY,et al. Evolution of the amount of inas in wetting layers in an inas/gaas quantum-dot system studied by reflectance difference spectroscopy[J]. Nanotechnology,2006,17(9):2207-2211.
APA	Chen, YH,Jin, P,Liang, LY,Ye, XL,Wang, ZG,&Martinez, AI.(2006).Evolution of the amount of inas in wetting layers in an inas/gaas quantum-dot system studied by reflectance difference spectroscopy.Nanotechnology,17(9),2207-2211.
MLA	Chen, YH,et al."Evolution of the amount of inas in wetting layers in an inas/gaas quantum-dot system studied by reflectance difference spectroscopy".Nanotechnology 17.9(2006):2207-2211.

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