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	Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress
	Tian, Deheng; Xue, Chengshan; Zhuang, Huizhao; Zhang, Xiaokai; Wu, Yuxin; He, Jianting; Liu, Yi'an; Wang, Fuxue
刊名	Journal of crystal growth
	2006-07-01
卷号	292期号:2页码:298-301
关键词	Actinomorphic nanowires Magnetic sputtering Gallium nitride
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2006.04.013
通讯作者	Xue, chengshan(xuechengshan@sdnu.edu.cn)
英文摘要	Actinomorphic gan nanowires clusters have been achieved by ammoniating ga2o3 thin films deposited on the mg layer on the si (111) substrate. the resulting materials were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), high resolution transmission electron microscopy (hrtem) and selected-area electron diffraction (saed). sem images show that the resulting materials are actinomorphic nanowires clusters with the glazed surface. xrd, hrtem and saed indicate that the nanowires are single-crystal hexagonal gan with a wurtzite structure. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词	BUILDING-BLOCKS ; SILICON ; GROWTH ; FILMS ; DEVICES ; CARBON ; DIODES
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000239481000027
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426640
专题	半导体研究所
通讯作者	Xue, Chengshan
作者单位	Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Tian, Deheng,Xue, Chengshan,Zhuang, Huizhao,et al. Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress[J]. Journal of crystal growth,2006,292(2):298-301.
APA	Tian, Deheng.,Xue, Chengshan.,Zhuang, Huizhao.,Zhang, Xiaokai.,Wu, Yuxin.,...&Wang, Fuxue.(2006).Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress.Journal of crystal growth,292(2),298-301.
MLA	Tian, Deheng,et al."Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress".Journal of crystal growth 292.2(2006):298-301.

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