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	Photoluminescence from c+ ion-implanted and electrochemical etched si layers
	Shi, Liwei; Wang, Qiang; Li, Yuguo; Xue, Chengshan; Zhuang, Huizhao
刊名	Applied surface science
	2006-10-15
卷号	252期号:24页码:8424-8427
关键词	Ion implantation Annealing Chemical etching Photoluminescence
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2005.11.050
通讯作者	Shi, liwei(liweishi@semi.ac.en)
英文摘要	The microstructural and optical analysis of si layers emitting blue luminescence at about 431 nm is reported. these structures have been synthesized by c+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. with the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716 nm at last, which shows characteristics of the emission of porous silicon. c=o compounds are induced during c+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. the possible mechanism of photoluminescence is presented. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词	POROUS SILICON ; LUMINESCENCE
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000241888000009
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426560
专题	半导体研究所
通讯作者	Shi, Liwei
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Shi, Liwei,Wang, Qiang,Li, Yuguo,et al. Photoluminescence from c+ ion-implanted and electrochemical etched si layers[J]. Applied surface science,2006,252(24):8424-8427.
APA	Shi, Liwei,Wang, Qiang,Li, Yuguo,Xue, Chengshan,&Zhuang, Huizhao.(2006).Photoluminescence from c+ ion-implanted and electrochemical etched si layers.Applied surface science,252(24),8424-8427.
MLA	Shi, Liwei,et al."Photoluminescence from c+ ion-implanted and electrochemical etched si layers".Applied surface science 252.24(2006):8424-8427.

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