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	Comment on "radiative and nonradiative recombination process in inn films grown by metal organic chemical vapor deposition" [appl. phys. lett. 86, 142104 (2005)]
	Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Bi, ZX; Gu, SL; Shi, Y; Zheng, YD; Hu, LJ; Chen, YH
刊名	Applied physics letters
	2005-10-24
卷号	87期号:17页码:2
ISSN号	0003-6951
DOI	10.1063/1.2117612
通讯作者	Zhang, r()
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000232723700086
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426533
专题	半导体研究所
通讯作者	Zhang, R
作者单位	1.Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Liu, B,Zhang, R,Xie, ZL,et al. Comment on "radiative and nonradiative recombination process in inn films grown by metal organic chemical vapor deposition" [appl. phys. lett. 86, 142104 (2005)][J]. Applied physics letters,2005,87(17):2.
APA	Liu, B.,Zhang, R.,Xie, ZL.,Xiu, XQ.,Bi, ZX.,...&Wang, ZG.(2005).Comment on "radiative and nonradiative recombination process in inn films grown by metal organic chemical vapor deposition" [appl. phys. lett. 86, 142104 (2005)].Applied physics letters,87(17),2.
MLA	Liu, B,et al."Comment on "radiative and nonradiative recombination process in inn films grown by metal organic chemical vapor deposition" [appl. phys. lett. 86, 142104 (2005)]".Applied physics letters 87.17(2005):2.

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