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	Tunneling in double-well model of porous silicon
	QIN, G; LIU, RB
刊名	Solid state communications
	1995-02-01
卷号	93期号:7页码:589-594
关键词	Nanostructures Quantum wells Semiconductors Tunneling
ISSN号	0038-1098
通讯作者	Qin, g()
英文摘要	Highly efficient photoluminescence (pl) in the visible light range has been found in porous silicon (ps). several models have been proposed to explain the experiment results. the experimental results and the analysis based on a simple tunneling model by vial et al are instructive for testing the rationality of these models, however the important effect of interaction between electron and hole, i.e., the exciton effect, is totally neglected in their work. in this paper, based on a double quantum well (dqw) model, the electron transmission coefficient, of tunneling through the sio2 barrier is calculated taking account of the interaction between electron and hole. then, the possible position of the luminescence center in the sio2 barrier layer is estimated in terms of the value of beta parameter obtained by vial et al from their experimental results. all these calculations are fundamental for further calculation of the quantum efficiency of pl in ps.
WOS关键词	BINDING-ENERGIES ; QUANTUM
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:A1995QE51900008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426429
专题	半导体研究所
通讯作者	QIN, G
作者单位	NATL LAB SUPERLATTICES & MICROSTRUCT,BEIJING,PEOPLES R CHINA
推荐引用方式 GB/T 7714	QIN, G,LIU, RB. Tunneling in double-well model of porous silicon[J]. Solid state communications,1995,93(7):589-594.
APA	QIN, G,&LIU, RB.(1995).Tunneling in double-well model of porous silicon.Solid state communications,93(7),589-594.
MLA	QIN, G,et al."Tunneling in double-well model of porous silicon".Solid state communications 93.7(1995):589-594.

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