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	Recombination kinetics of te isoelectronic centers in znste
	Yang, XD; Xu, ZY; Sun, Z; Sun, BQ; Li, GH; Sou, IK; Ge, WK
刊名	Applied physics letters
	2005-01-31
卷号	86期号:5页码:3
ISSN号	0003-6951
DOI	10.1063/1.1861128
通讯作者	Yang, xd(zyxu@red.semi.ac.cn)
英文摘要	The recombination kinetics of te isoelectronic centers in zns1-xtex (0.0065 less than or equal to x less than or equal to 0.85) alloys is studied by time-resolved photoluminescence (trpl) at low temperature. the measured radiative recombination lifetimes of different te bound exciton states are quite different, varying from a few nanoseconds to tens of nanosecond. as the bound exciton state evolves from a single te impurity (te-1) to larger te clusters (te-n, n=2,3,4), the recombination lifetime increases. it reaches maximum (similar to40 ns) for the te-4 bound states at x=0.155. the increase of the exciton lifetime is attributed to the increasing exciton localization effect caused by larger localization potential. in the large te composition range (x > 0.155), the exciton recombination lifetime decreases monotonically with te composition. it is mainly due to the hybridization between the te localized states and the host valence band states. the composition dependences of the exciton binding energy and the photoluminescence (pl) line width show the similar tendency that further support the localization picture obtained from the trpl measurement. (c) 2005 american institute of physics.
WOS关键词	ZINC-SULFIDE ; ALLOYS ; LIFETIMES ; PRESSURE ; NITROGEN ; EXCITONS ; STATES ; GAASN
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000227144700029
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426347
专题	半导体研究所
通讯作者	Yang, XD
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Yang, XD,Xu, ZY,Sun, Z,et al. Recombination kinetics of te isoelectronic centers in znste[J]. Applied physics letters,2005,86(5):3.
APA	Yang, XD.,Xu, ZY.,Sun, Z.,Sun, BQ.,Li, GH.,...&Ge, WK.(2005).Recombination kinetics of te isoelectronic centers in znste.Applied physics letters,86(5),3.
MLA	Yang, XD,et al."Recombination kinetics of te isoelectronic centers in znste".Applied physics letters 86.5(2005):3.

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