QQ客服 官方微博 反馈留言

	One-step growth of zno from film to vertically well-aligned nanorods and the morphology-dependent raman scattering
	Cong, GW; Wei, HY; Zhang, PF; Peng, WQ; Wu, JJ; Liu, XL; Jiao, CM; Hu, WG; Zhu, QS; Wang, ZG
刊名	Applied physics letters
	2005-12-05
卷号	87期号:23页码:3
ISSN号	0003-6951
DOI	10.1063/1.2137308
通讯作者	Cong, gw(gwcong@semi.ac.cn)
英文摘要	We observed a transition from film to vertically well-aligned nanorods for zno grown on sapphire (0001) substrates by metalorganic chemical vapor deposition. a growth mechanism was proposed to explain such a transition. vertically well-aligned homogeneous nanorods with average diameters of similar to 30, 45, 60, and 70 nm were grown with the c-axis orientation. raman scattering showed that the e-2 (high) mode shifted to high frequency with the decrease of nanorod diameters, which revealed the dependence of nanorod diameters on the stress state. this dependence suggests a stress-driven diameter-controlled mechanism for zno nanorod arrays grown on sapphire (0001) substrates. (c) 2005 american institute of physics.
WOS关键词	NANOWIRES ; ENERGIES ; STRAIN ; GA
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000233723200025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426280
专题	半导体研究所
通讯作者	Cong, GW
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Cong, GW,Wei, HY,Zhang, PF,et al. One-step growth of zno from film to vertically well-aligned nanorods and the morphology-dependent raman scattering[J]. Applied physics letters,2005,87(23):3.
APA	Cong, GW.,Wei, HY.,Zhang, PF.,Peng, WQ.,Wu, JJ.,...&Wang, ZG.(2005).One-step growth of zno from film to vertically well-aligned nanorods and the morphology-dependent raman scattering.Applied physics letters,87(23),3.
MLA	Cong, GW,et al."One-step growth of zno from film to vertically well-aligned nanorods and the morphology-dependent raman scattering".Applied physics letters 87.23(2005):3.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。