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	Annealing ambient controlled deep defect formation in inp
	Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Zeng, YP; Sun, NF; Sun, TN
刊名	European physical journal-applied physics
	2004-07-01
卷号	27期号:1-3页码:167-169
ISSN号	1286-0042
DOI	10.1051/epjap:2004096
通讯作者	Zhao, yw(zhaoyw@red.semi.ac.nc)
英文摘要	Deep defects in annealed inp have been investigated by deep level transient capacitance spectroscopy (dlts), photo induced current transient spectroscopy (picts) and thermally stimulated current spectroscopy (tsc). both dlts results of annealed semiconducting inp and picts and tsc results of annealed semi-insulating inp indicate that inp annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. the correlation of the defects and the nature of the defects in annealed inp are discussed based on the results.
WOS关键词	FE-DOPED INP ; SEMIINSULATING INP ; POINT-DEFECTS ; PRESSURE ; WAFERS ; TRAPS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	E D P SCIENCES
WOS记录号	WOS:000224559500033
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426259
专题	半导体研究所
通讯作者	Zhao, YW
作者单位	1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Hebei Semicond Res Inst, Shijiazhuang 050051, Hebei, Peoples R China
推荐引用方式 GB/T 7714	Zhao, YW,Dong, ZY,Duan, ML,et al. Annealing ambient controlled deep defect formation in inp[J]. European physical journal-applied physics,2004,27(1-3):167-169.
APA	Zhao, YW.,Dong, ZY.,Duan, ML.,Sun, WR.,Zeng, YP.,...&Sun, TN.(2004).Annealing ambient controlled deep defect formation in inp.European physical journal-applied physics,27(1-3),167-169.
MLA	Zhao, YW,et al."Annealing ambient controlled deep defect formation in inp".European physical journal-applied physics 27.1-3(2004):167-169.

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