| Organic light-emitting transistors containing a laterally arranged heterojunction | |
| Di, Chong-an; Yu, Gui; Liu, Yunqi; Xu, Xinjun; Wei, Dacheng; Song, Yabin; Sun, Yanming; Wang, Ying; Zhu, Daoben | |
| 刊名 | Advanced functional materials
 |
| 2007-06-18 | |
| 卷号 | 17期号:9页码:1567-1573 |
| ISSN号 | 1616-301X |
| DOI | 10.1002/adfm.200601140 |
| 通讯作者 | Yu, gui(yugui@mail.iccas.ac.cn) |
| 英文摘要 | An approach to produce organic light-emitting transistors (olets) containing a laterally arranged heterojunction structure, which minimizes exciton quenching at the metal electrodes, is described. this device configuration provides an organic light-emitting diode (oled) structure where the anode (source) electrode, hole-transport material (field-effect material), light-emitting material, and cathode (drain) electrode are laterally arranged, thus offering a chance to control the electrolummescent intensity by changing the gate bias. pentacene and tris(8-quinolinolato)aluminum (alq(3)) are employed as the field-effect and light-emitting materials, respectively. ne laterally arranged heterojunction structures are achieved by successively inclined deposition of the field-effect and light-emitting materials. after deposition of pentacene, a narrow gap of about 10-20 nm between the drain electrode and pentacene was obtained, thereby creating an opportunity to fabricate a laterally arranged heterojunction. in the olets, unsymmetrical source and drain electrodes, that is, an and lif/al ones, are used to ensure efficient injection of holes and electrons. visible-light emission from olets is observed under ambient atmosphere. this result is ascribed to efficient carrier injection and transport, formation of a heterojunction, as well as good luminescence from the organic emissive layer. the device structure serves as an excellent model system for olets and demonstrates a general concept of adjusting the charge-carrier injection and transport, as well as the electroluminescent properties, by forming laterally arranged heterojunctions. |
| WOS关键词 | FIELD-EFFECT TRANSISTORS ; THIN-FILM TRANSISTORS ; HIGH-ELECTRON-MOBILITY ; POLYMER TRANSISTOR ; SOLUTION-CAST ; AMBIPOLAR ; EMISSION ; PERFORMANCE ; SEMICONDUCTORS ; STABILITY |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:000247806300017 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2380349 |
| 专题 | 中国科学院大学 |
| 通讯作者 | Yu, Gui |
| 作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China |
| 推荐引用方式 GB/T 7714 | Di, Chong-an,Yu, Gui,Liu, Yunqi,et al. Organic light-emitting transistors containing a laterally arranged heterojunction[J]. Advanced functional materials,2007,17(9):1567-1573. |
| APA | Di, Chong-an.,Yu, Gui.,Liu, Yunqi.,Xu, Xinjun.,Wei, Dacheng.,...&Zhu, Daoben.(2007).Organic light-emitting transistors containing a laterally arranged heterojunction.Advanced functional materials,17(9),1567-1573. |
| MLA | Di, Chong-an,et al."Organic light-emitting transistors containing a laterally arranged heterojunction".Advanced functional materials 17.9(2007):1567-1573. |
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