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	Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling
	Li, Heng1,2; Cheng, Gong1,2; Xu, Gaowei1; Luo, Le1
刊名	Journal of materials science-materials in electronics
	2016-11-01
卷号	27期号:11页码:11548-11555
ISSN号	0957-4522
DOI	10.1007/s10854-016-5285-8
通讯作者	Luo, le(leluo@mail.sim.ac.cn)
英文摘要	Thick cu films are widely used in wafer level packaging, and the stress evolution during subsequent thermal cycling as well as the induced wafer warpage may make a significant impact on product yielding and needs to be investigated. the stress evolution behavior of 5 mu m thick as-electroplated cu films during thermal cycling are in situ investigated by wafer warpage measurement. it is revealed by microstructure analyses that the grain growth during thermal cycling is ignorable in current work, but dramatic atomic diffusion has occurred, suggesting the deformation mechanism is dominated by diffusional creep. as the dominant diffusion mechanism differs at different temperatures, an equivalent diffusional energy that has a linearly correlation to temperature is proposed, and consequently a stress evolution model based on the equivalent diffusional energy is deduced. compared with conventional work, the current model has fewer fitted parameters, and shows better agreement with the experiment results.
WOS关键词	ELECTROPLATED CU FILMS ; COPPER THIN-FILMS ; STRESS-RELAXATION ; DIFFUSIONAL CREEP ; RESIDUAL-STRESS ; SILICON ; ELECTROMIGRATION ; INTERCONNECTS ; INTEGRATION
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000386367000055
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2374935
专题	中国科学院大学
通讯作者	Luo, Le
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Li, Heng,Cheng, Gong,Xu, Gaowei,et al. Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling[J]. Journal of materials science-materials in electronics,2016,27(11):11548-11555.
APA	Li, Heng,Cheng, Gong,Xu, Gaowei,&Luo, Le.(2016).Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling.Journal of materials science-materials in electronics,27(11),11548-11555.
MLA	Li, Heng,et al."Explore of warpage origination in wlp and processing influence factors by experiment and theoretical modeling".Journal of materials science-materials in electronics 27.11(2016):11548-11555.

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