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	The electronic structure and passivation mechanism of CZTS grain boundaries revealed by comparative study with CIGS using scanning probe microscopy
	Guo Chen; Kang Zhou; Ye Feng; Hailin Luo; Guohua Zhong; Wenjie Li; Chunlei Yang
	2018
会议日期	2018
会议地点	Los Angeles, California
英文摘要	The efficiency of CZTS solar cells is still not so high compared with other thin films such as CIGS. The underlying mechanism for the difference is a long-standing question that has remained elusive [1] in spite of tremendous research efforts in the past. For polycrystalline thin film semiconductor, highly populated grain boundaries in the material will certainly have big influences on the photo-generated electron-holes. In this work, a conducting probe atomic force microscopy has been applied to study the electronic structure of CIGS and CZTS thin films with capability of nm-scale resolution. Different electronic structure of the grain-interior (GI) and grain boundary (GB) have been identified in both CIGS and CZTS thin films. We find that the band alignment between GI and GB in CIGS and CZTS is different, which can well explain the different device performance in two type of solar cells.
内容类型	会议论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/13700]
专题	深圳先进技术研究院_集成所
推荐引用方式 GB/T 7714	Guo Chen,Kang Zhou,Ye Feng,et al. The electronic structure and passivation mechanism of CZTS grain boundaries revealed by comparative study with CIGS using scanning probe microscopy[C]. 见:. Los Angeles, California. 2018.

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