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Growth and Electronic Application of p-Undoped Freestanding Diamond Film
Huang Jian[1]; Liu Jianmin[2]; Wang Linjun[3]; Xu Run[4]; Shi Weimin[5]; Xia Yiben[6]
刊名PLASMA SCIENCE & TECHNOLOGY
2009
卷号11页码:302-306
关键词freestanding diamond heterojunction MPCVD ZnO
ISSN号1009-0630
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2322304
专题上海大学
作者单位1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
2.[2]Jingdezhen Ceram Inst, Jingdezhen 333403, Peoples R China.
3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
推荐引用方式
GB/T 7714
Huang Jian[1],Liu Jianmin[2],Wang Linjun[3],et al. Growth and Electronic Application of p-Undoped Freestanding Diamond Film[J]. PLASMA SCIENCE & TECHNOLOGY,2009,11:302-306.
APA Huang Jian[1],Liu Jianmin[2],Wang Linjun[3],Xu Run[4],Shi Weimin[5],&Xia Yiben[6].(2009).Growth and Electronic Application of p-Undoped Freestanding Diamond Film.PLASMA SCIENCE & TECHNOLOGY,11,302-306.
MLA Huang Jian[1],et al."Growth and Electronic Application of p-Undoped Freestanding Diamond Film".PLASMA SCIENCE & TECHNOLOGY 11(2009):302-306.
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