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	Ni-induced Lateral Fast Crystallization of Amorphous Silicon Film by Microwave Annealing
	Sun, Jie[1]; Shi, Weiming[2]; Yang, Weiguang[3]; Zhou, Pingsheng[4]; Wang, Linjun[5]
	2011
会议名称	MATERIALS PROCESSING TECHNOLOGY
会议日期	2011-10-28
关键词	Ni-induced lateral crystallization amorphous Si microwave annealing poly Si
页码	133-137
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2307642
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Sun, Jie[1],Shi, Weiming[2],Yang, Weiguang[3],et al. Ni-induced Lateral Fast Crystallization of Amorphous Silicon Film by Microwave Annealing[C]. 见:MATERIALS PROCESSING TECHNOLOGY. 2011-10-28.

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