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	Stability of amorphous InAlZnO thin-film transistors
	Zhang, Jie[1]; Lu, Jianguo[2]; Jiang, Qingjun[3]; Lu, Bin[4]; Pan, Xinhua[5]; Chen, Lingxiang[6]; Ye, Zhizhen[7]; Li, Xifeng[8]; Guo, Peijun[9]; Zhou, Nanjia[10]
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2014
卷号	32
ISSN号	1071-1023
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2276640
专题	上海大学
作者单位	1.[1]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 2.[2]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 3.[3]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 4.[4]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 5.[5]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 6.[6]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 7.[7]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China. 8.[8]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 9.[9]Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA.,Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA. 10.[10]Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA.,Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA.
推荐引用方式 GB/T 7714	Zhang, Jie[1],Lu, Jianguo[2],Jiang, Qingjun[3],et al. Stability of amorphous InAlZnO thin-film transistors[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2014,32.
APA	Zhang, Jie[1].,Lu, Jianguo[2].,Jiang, Qingjun[3].,Lu, Bin[4].,Pan, Xinhua[5].,...&Zhou, Nanjia[10].(2014).Stability of amorphous InAlZnO thin-film transistors.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,32.
MLA	Zhang, Jie[1],et al."Stability of amorphous InAlZnO thin-film transistors".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 32(2014).

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