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	Arsenic dimer (As2+) Lightly Doped Drain(LDD)implantation study for 20nm logic device development
	Sun, Hao[1]; Li, Yong[2]; Zhang, Shuai[3]; Xie, Xinyun[4]; Cai, Gorge[5]; Zhou, Zuyuan[6]; Shi, Xuejie[7]; He, Yonggen[8]; Shi, Weimin[9]; Ju, Jianhua[10]
	2014
页码	51-55
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2271147
专题	上海大学
作者单位	[1]School of Materials Science and Eng, Shanghai University, 200072, China [2]Logic Technology and Development Center, SMIC, 201203, China[3]Logic Technology and Development Center, SMIC, 201203, China[4]Logic Technology and Development Center, SMIC, 201203, China[5]Logic Technology and Development Center, SMIC, 201203, China[6]Logic Technology and Development Center, SMIC, 201203, China[7]Logic Technology and Development Center, SMIC, 201203, China[8]Logic Technology and Development Center, SMIC, 201203, China[9]School of Materials Science and Eng, Shanghai University, 200072, China [10]Logic Technology and Development Center, SMIC, 201203, China[11]Logic Technology and Development Center, SMIC, 201203, China[12]Logic Technology and Development Center, SMIC, 201203, China
推荐引用方式 GB/T 7714	Sun, Hao[1],Li, Yong[2],Zhang, Shuai[3],et al. Arsenic dimer (As2+) Lightly Doped Drain(LDD)implantation study for 20nm logic device development[C]. 见:.

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