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	Process parameter selection study on SiNx:H films by PECVD method for silicon solar cells
	Wu, Xiaosong[1]; Zhang, Zaifang[2]; Liu, Yuan[3]; Chu, Xuening[4]; Li, Yupeng[5]
刊名	SOLAR ENERGY
	2015
卷号	111页码:277-287
关键词	SiNx:H film PECVD Process parameter selection Orthogonal experiment Numerical simulation
ISSN号	0038-092X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2269894
专题	上海大学
作者单位	1.[1]Shanghai Jiao Tong Univ, Sch Mech Engn, Shanghai 200240, Peoples R China. 2.[2]Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Jiao Tong Univ, Sch Mech Engn, Shanghai 200240, Peoples R China. 5.[5]Shanghai Jiao Tong Univ, Sch Mech Engn, Shanghai 200240, Peoples R China.
推荐引用方式 GB/T 7714	Wu, Xiaosong[1],Zhang, Zaifang[2],Liu, Yuan[3],et al. Process parameter selection study on SiNx:H films by PECVD method for silicon solar cells[J]. SOLAR ENERGY,2015,111:277-287.
APA	Wu, Xiaosong[1],Zhang, Zaifang[2],Liu, Yuan[3],Chu, Xuening[4],&Li, Yupeng[5].(2015).Process parameter selection study on SiNx:H films by PECVD method for silicon solar cells.SOLAR ENERGY,111,277-287.
MLA	Wu, Xiaosong[1],et al."Process parameter selection study on SiNx:H films by PECVD method for silicon solar cells".SOLAR ENERGY 111(2015):277-287.

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