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Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process
Zhang, Jun[1]; Deng, Hongmei[2]; He, Jun[3]; Meng, Xiankuan[4]; Liu, Tantan[5]; Sun, Lin[6]; Yang, Pingxiong[7]; Chu, Junhao[8]
刊名APPLIED SURFACE SCIENCE
2015
卷号326页码:211-215
关键词CuIn1-xAlxSe2 Sputtering Thin film Interface
ISSN号0169-4332
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2236830
专题上海大学
作者单位1.[1]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
2.[2]Shanghai Univ, Lab Microstruct, Shanghai 200444, Peoples R China.
3.[3]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
4.[4]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
5.[5]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
6.[6]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
7.[7]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
8.[8]E China Normal Univ, Dept Elect Engn, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, Jun[1],Deng, Hongmei[2],He, Jun[3],et al. Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process[J]. APPLIED SURFACE SCIENCE,2015,326:211-215.
APA Zhang, Jun[1].,Deng, Hongmei[2].,He, Jun[3].,Meng, Xiankuan[4].,Liu, Tantan[5].,...&Chu, Junhao[8].(2015).Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process.APPLIED SURFACE SCIENCE,326,211-215.
MLA Zhang, Jun[1],et al."Structural and electrical properties of CuIn1-xAlxSe2 thin films prepared by radio-frequency magnetron sputtering process".APPLIED SURFACE SCIENCE 326(2015):211-215.
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